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Please use this identifier to cite or link to this item: http://hdl.handle.net/UCSP/15850
Title: Nonlinear device model for GaN and GaAs microwave transistors including memory effects
Authors: Rafael Valdivia, Guillermo
Urquizo, Anthony
Mendoza, Thalia
Barbin, Silvio
Keywords: Equivalent circuits;Gallium arsenide;Gallium nitride;Heterojunction bipolar transistors;Microwave devices;Models;Optoelectronic devices;Scattering parameters;Semiconducting gallium;Frequency dispersion effect;GaAs;Large-signal conditions;Large-signal equivalent circuit;Memory effects;Microwave transistors;Nonlinear device modeling;Pulsed measurements;Microwaves
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
metadata.dc.relation.uri: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964497106&doi=10.1109%2fIMOC.2015.7369094&partnerID=40&md5=3c767dd7a352c392e719bd25a5c68530
Abstract: In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit. © 2015 IEEE.
URI: http://repositorio.ucsp.edu.pe/handle/UCSP/15850
ISBN: urn:isbn:9781467394925
Appears in Collections:Artículos - Ingeniería Electrónica y de Telecomunicaciones

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