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Please use this identifier to cite or link to this item: http://hdl.handle.net/UCSP/15791
Title: Methodology for modeling and implementation of RF power amplifiers
Authors: Rafael Valdivia, Guillermo
Ruelas Galdós, Hernán
Salinas Roque, Ricardo
Keywords: Microwave devices;Power amplifiers;Semiconductor device manufacture;Frequency dispersion effect;Large-signal performance;Level model;Microwave transistors;Pulsed measurements;RF power amplifiers;Semiconductor technology;Trapping effects;Radio frequency amplifiers
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
metadata.dc.relation.uri: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85015828013&doi=10.1109%2fLAMC.2016.7851281&partnerID=40&md5=d30b4ea282a8664aa71c20a503e33b93
Abstract: A new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE.
URI: http://repositorio.ucsp.edu.pe/handle/UCSP/15791
ISBN: urn:isbn:9781509042876
Appears in Collections:Artículos - Ingeniería Electrónica y de Telecomunicaciones

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