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http://hdl.handle.net/UCSP/15791| Title: | Methodology for modeling and implementation of RF power amplifiers |
| Authors: | Rafael Valdivia, Guillermo Ruelas Galdós, Hernán Salinas Roque, Ricardo |
| Keywords: | Microwave devices;Power amplifiers;Semiconductor device manufacture;Frequency dispersion effect;Large-signal performance;Level model;Microwave transistors;Pulsed measurements;RF power amplifiers;Semiconductor technology;Trapping effects;Radio frequency amplifiers |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| metadata.dc.relation.uri: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85015828013&doi=10.1109%2fLAMC.2016.7851281&partnerID=40&md5=d30b4ea282a8664aa71c20a503e33b93 |
| Abstract: | A new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE. |
| URI: | http://repositorio.ucsp.edu.pe/handle/UCSP/15791 |
| ISBN: | urn:isbn:9781509042876 |
| Appears in Collections: | Artículos - Ingeniería Electrónica y de Telecomunicaciones |
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