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|Title:||Nonlinear device model for GaN and GaAs microwave transistors including memory effects|
|Authors:||Rafael Valdivia, Guillermo|
|Keywords:||Equivalent circuits;Gallium arsenide;Gallium nitride;Heterojunction bipolar transistors;Microwave devices;Models;Optoelectronic devices;Scattering parameters;Semiconducting gallium;Frequency dispersion effect;GaAs;Large-signal conditions;Large-signal equivalent circuit;Memory effects;Microwave transistors;Nonlinear device modeling;Pulsed measurements;Microwaves|
|Publisher:||Institute of Electrical and Electronics Engineers Inc.|
|Abstract:||In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit. © 2015 IEEE.|
|Appears in Collections:||Artículos de investigación|
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