Please use this identifier to cite or link to this item:
http://hdl.handle.net/UCSP/15862
Title: | Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication |
Authors: | Rafael Valdivia, Guillermo Su, Zhiguo Urquizo, Anthony Mendoza, Thalia |
Keywords: | Convolutional codes;Dispersions;Gallium arsenide;Gallium nitride;Microwave devices;Scattering parameters;Circuit modeling;FETs;Frequency dispersion;Frequency dispersion effect;Large-signal conditions;Memory effects;Pulsed measurements;Wide-band communications;Semiconducting gallium |
Issue Date: | 2014 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
metadata.dc.relation.uri: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946688468&doi=10.1109%2fLATINCOM.2014.7041886&partnerID=40&md5=5e5e5ac66f8967868b8ff62a8f5cf4e4 |
Abstract: | A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE. |
URI: | http://repositorio.ucsp.edu.pe/handle/UCSP/15862 |
ISBN: | urn:isbn:9781479971626 |
Appears in Collections: | Artículos - Ingeniería Electrónica y de Telecomunicaciones |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.