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Please use this identifier to cite or link to this item: http://hdl.handle.net/UCSP/15862
Title: Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
Authors: Rafael Valdivia, Guillermo
Su, Zhiguo
Urquizo, Anthony
Mendoza, Thalia
Keywords: Convolutional codes;Dispersions;Gallium arsenide;Gallium nitride;Microwave devices;Scattering parameters;Circuit modeling;FETs;Frequency dispersion;Frequency dispersion effect;Large-signal conditions;Memory effects;Pulsed measurements;Wide-band communications;Semiconducting gallium
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
metadata.dc.relation.uri: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946688468&doi=10.1109%2fLATINCOM.2014.7041886&partnerID=40&md5=5e5e5ac66f8967868b8ff62a8f5cf4e4
Abstract: A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE.
URI: http://repositorio.ucsp.edu.pe/handle/UCSP/15862
ISBN: urn:isbn:9781479971626
Appears in Collections:Artículos - Ingeniería Electrónica y de Telecomunicaciones

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