Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
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Institute of Electrical and Electronics Engineers Inc.
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE.
Convolutional codes , Dispersions , Gallium arsenide , Gallium nitride , Microwave devices , Scattering parameters , Circuit modeling , FETs , Frequency dispersion , Frequency dispersion effect , Large-signal conditions , Memory effects , Pulsed measurements , Wide-band communications , Semiconducting gallium